RVPW012 系列

  • 输入电压4V~80V 超宽范围
  • 原边反馈(PSR)最小采样时间低至0.4μS
  • 在重载条件下以边界传导模式(BCM)导通
  • 集成132V/0.2Ω LDMOS
  • 集成无损电流采样
  • 可编程峰值电流
  • 可编程功率 MOSFET 驱动速度
  • 可编程输入欠压及过压保护
  • 短路保护、过温保护
  • 轻载条件下降低工作频率以提升效率
  • 可编程前馈补偿
  • 可编程软启动
  • 内置原边反馈(PSR)环路补偿
  • 输出二极管压降温度补偿
  • QFN5×5 强散热封装

RVPW012 是一款反激式变换器,通过采样变压器原边绕组实现稳压,在数百 kHz 工作频率下支持原边反馈(PSR)。其内置输出电压采样电路的采样电压脉宽可低至 400ns。芯片集成环路补偿电路,动态响应快,可确保开关电源具备优异的稳定性与响应速度。

RVPW012 集成多种控制功能,仅需简单外围器件,且可根据实际设计需求灵活配置。芯片可通过外接电阻实现启动、前馈补偿、内部功率 MOSFET 关断速度编程三大核心功能。此外,功率 MOSFET 的峰值电流可通过电阻编程,实现无损电流采样。通过两颗电阻即可同时设置输入欠压保护与过压保护阈值。

该器件还集成全面的保护功能,包括过载保护(OLP)、输出短路保护(SCP)、输出过压保护(OVP)及过温保护(OTP),异常解除后可自恢复,最大限度提升开关电源系统的可靠性。

  产品编号 功率(W) 输入电压(V) 输出电压 1(V) 输出电流 1 (mA) 隔离电压 (kV)
1 RECOM | RVPW012-FJ2-CT | IC, SMD (pinless)
重点
4 - 80
2 RECOM | RVPW012-FJ2-R | IC, SMD (pinless)
重点
4 - 80

IC 与变压器组合方案,板载 / 分立器件任意选

  产品编号 功率(W) 隔离电压 (kV) 输入电压(V) 主输出电压(V) 原边 IC 变压器 副边 IC
1
10 1.5 40 - 60 5
特性 RVPW012
Product Category IC
输入电压(V) 4 - 80
主输出电压(V) 2 ‐ 999
输出电压范围(V) 2 - 999
MAX Iout (mA) 7
安装类型 SMD (无引脚)
封装类型 QFN5x5
长度 (mm) 5.1
宽度 (mm) 5.1
高度 (mm) 0.8
最低工作温度 (°C) -40
最高工作温度 (°C) 125
保护功能 OCP, OTP, OVP
指令 Halogen-free, REACH, RoHS 2+ (10/10)
工作模式 Current Mode
质保 1 Year
Config 1 Channel
拓扑结构 Flyback
Number of Phases 1
Functional Features Enable, Soft Start, Variable Switching Frequency
MIN Switching Frequency (kHz) 1.15
MAX Switching Frequency (kHz) 330
MIN Storage Temperature (°C) -55
MAX Storage Temperature (°C) 150
  产品编号 功率(W) 输出电压 1(V) 输入电压(V) 安装类型
1 RECOM | RVPW012-FJ2-CT | IC, SMD (pinless)
重点
4 - 80 SMD (无引脚)
2 RECOM | RVPW012-FJ2-R | IC, SMD (pinless)
重点
4 - 80 SMD (无引脚)
Industrial power supplies must prioritize reliability, wide input ranges, protection features, and high efficiency. They should also function over the typical industrial ambient temperature range of -40°C to +85°C.
Microcontrollers are typically powered using low-noise DC/DC converters or linear regulators that provide very stable voltage rails. Because microcontroller input current is highly dynamic, a fast transient response is required to maintain stability during sudden shifts in processing load.
Reliability depends on component quality, thermal management, protection features, and proper electrical design.
IoT devices typically require highly efficient, compact, and low-power DC/DC converters to maximize battery life.
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
A strong gate driver reduces switching losses by ensuring fast and controlled transitions between on and off states. By driving the gate voltage to the optimal positive and negative voltages, the full power capability of the switching transistor can be used.
A gate driver IC is used to drive the gate of power transistors such as MOSFETs, SiCs, GaNs, or IGBTs, providing the required gate voltage and current for fast switching. It acts as an essential buffer between a low-power control signal and the high-power transistor gate, ensuring efficient state transitions and protecting the controller from high-voltage transients.
A half-bridge gate driver controls two switching devices arranged in a half-bridge configuration to actively pull up and pull down the output.
Bootstrap circuits generate the voltage required to drive high-side switches above the supply voltage.
Dead time is a short delay between switching events to prevent both transistors in a bridge configuration from conducting simultaneously or to allow full core de-energization in a push-pull configuration.
Gate charge represents the amount of charge required to turn a transistor on or off and determines the required gate driver current. It is critical because it dictates switching speed.
Transistor gates have defined switching threshold voltages and significant parasitic capacitances, which requires strong drive current to switch quickly and efficiently. To ensure full switch-on current, the gate drive may go up to a much higher voltage (+15 to +20V) than the switching threshold voltage (typically a few volts). To guarantee secure switch-off characteristics, the gate drive may need to go negative (-3V to -9V).
EMI can be reduced through optimized PCB layout, proper grounding, shielding, filtering, and controlled switching transitions.
Thermal issues can be mitigated by improving PCB copper areas, using thermal vias, optimizing efficiency, and ensuring good airflow.
Instability can result from improper feedback compensation, poor layout, or unsuitable component selection. It typically occurs when the feedback loop has insufficient phase margin, causing the output to oscillate rather than settle.
Decoupling capacitors should be placed as close as possible to the IC supply pins to minimize noise and voltage ripple.
Proper PCB layout minimizes parasitic inductance, reduces noise, improves thermal performance, and ensures stable converter operation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).

MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.
The ratio between primary and secondary windings determines the voltage conversion ratio. In transformer-based converters, this ratio is typically adjusted to account for real-world circuit losses. For instance, a transformer meant for 5V to 5V conversion often uses a 1:1.11 turns ratio.
Common materials include ferrite cores and powdered iron cores, selected for their magnetic performance and switching frequency characteristics.
A flyback transformer is used in flyback topologies to store and transfer energy. Unlike standard transformers, it requires a core gap to store energy during the "on" cycle before releasing it to the output. It also typically includes an auxiliary winding to power the controller once the circuit is running.
A forward transformer transfers energy directly from the primary to the secondary winding during the "on" period of the switching cycle. Unlike a flyback transformer, it does not store energy in its core; instead, it relies on an output inductor to store energy and maintain current flow when the switch is off.
A power transformer transfers energy between circuits through magnetic coupling and is often used for voltage conversion and isolation. It transfers energy via magnetic flux within the core and does not require a gap.
An isolation transformer provides galvanic isolation between the input and output circuits for safety and noise reduction.
A transformer has two or more windings and transfers energy between circuits, while an inductor stores energy in a magnetic field via a single winding.
Galvanic isolation improves safety, prevents ground loops, and protects sensitive circuits from high voltages. It ensures there is no direct conduction path between the input and output. This is vital for protecting users from mains voltage and preventing noise or surges from damaging low-voltage control electronics.