RVP001 系列

  • 全桥拓扑结构
  • 高度集成、方案简洁
  • 内置 0.13Ω NMOS 管
  • 内置 0.25Ω PMOS 管
  • 0.9A 钳位限流
  • 输入电压范围:3–6V
  • 浪涌电压可达 10V
  • 输入过压保护
  • 持续短路保护、过温保护、自恢复功能
  • 工作环境温度:-40°C~+125°C

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RVP001 是一款变压器驱动芯片,专为需要低待机功耗的紧凑型、微功率隔离电源而设计。仅需简单的输入 / 输出滤波电容、隔离变压器及整流电路,即可构成一套完整的隔离电源方案:输入电压范围 3–6V,支持多种输出电压可选,输出功率最高可达 2W。

RVP001 采用全桥结构,集成两颗 N 沟道与两颗 P 沟道 MOSFET。片内振荡器可产生一对高精度互补信号,确保开关对称,从而在工作中最小化磁偏置。为提升系统可靠性,RVP001 集成多重保护功能。高精度死区控制电路可实现先断后合开关,避免在不同工作条件下发生直通。该芯片还具备过流检测与过温保护,可对开关电源输出短路等异常情况提供防护。

  产品编号 功率(W) 输入电压(V) 输出电压 1(V) 输出电流 1 (mA) 隔离电压 (kV)
1 RECOM | RVP001-FBN-CT | IC, SMD (pinless)
重点
3 - 6
2 RECOM | RVP001-FBN-R | IC, SMD (pinless)
重点
3 - 6

IC 与变压器组合方案,板载 / 分立器件任意选

  产品编号 功率(W) 隔离电压 (kV) 输入电压(V) 主输出电压(V) 原边 IC 变压器 副边 IC
1
1 1.5 5 5
2
1 3 5 5
3
1 6.36 5 5
4
1 7 5 5
特性 RVP001
Product Category IC
输入电压(V) 3 - 6
主输出电压(V) 3 ‐ 6
输出电压范围(V) 3 - 6
MAX Iout (mA) 500
安装类型 SMD (无引脚)
封装类型 DFN2x2-6
长度 (mm) 2.1
宽度 (mm) 2.1
高度 (mm) 0.8
最低工作温度 (°C) -40
最高工作温度 (°C) 125
保护功能 OCP, OTP, OVP
指令 Halogen-free, REACH, RoHS 2+ (10/10)
工作模式 Current Mode
质保 1 Year
Config 1 Channel
拓扑结构 Full-Bridge
Number of Phases 1
MAX Duty Cycle (%) 100
Functional Features Enable
MIN Switching Frequency (kHz) 340
MAX Switching Frequency (kHz) 340
MIN Storage Temperature (°C) -55
MAX Storage Temperature (°C) 150
  产品编号 功率(W) 输出电压 1(V) 输入电压(V) 安装类型
1 RECOM | RVP001-FBN-CT | IC, SMD (pinless)
重点
3 - 6 SMD (无引脚)
2 RECOM | RVP001-FBN-R | IC, SMD (pinless)
重点
3 - 6 SMD (无引脚)
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).

MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.