Since SiC and GaN are not yet as mature as silicon technologies, standards continue to evolve as manufacturers improve performance with each successive generation. For example, first-, second-, and third-generation SiC devices are available on the market from different manufacturers, and each generation requires a different voltage combination to turn the device on and off.
This presents a challenge for both the SiC gate driver and the isolated DC/DC converters used as the gate driver power supply. These DC/DC converters typically use an internal transformer to provide isolation. The transformer is desiged with a fixed ratio to supply the bias voltage appropriate for the gate driver being used.
As a result, one DC/DC converter is needed to supply one SiC device with turn-on and turn-off voltages of +15V and -8V; a different SiC converter is needed to supply another SiC device with voltages of +15V and -3V. If both combinations are available as standard products, that is not a problem, but if a new isolated power supply design is required, the schedule may be impacted and safety recertification may be necessary. Unit cost is also likely to increase due to lower production volumes.
This presents a challenge for both the SiC gate driver and the isolated DC/DC converters used as the gate driver power supply. These DC/DC converters typically use an internal transformer to provide isolation. The transformer is desiged with a fixed ratio to supply the bias voltage appropriate for the gate driver being used.
As a result, one DC/DC converter is needed to supply one SiC device with turn-on and turn-off voltages of +15V and -8V; a different SiC converter is needed to supply another SiC device with voltages of +15V and -3V. If both combinations are available as standard products, that is not a problem, but if a new isolated power supply design is required, the schedule may be impacted and safety recertification may be necessary. Unit cost is also likely to increase due to lower production volumes.

