RVPW014 系列

  • 适用于原边反馈（PSR）与副边反馈（SSR）反激、升压、降压拓扑
  • 原边反馈（PSR）最小采样时间低至 0.4μs
  • 兼容连续导通模式（CCM）与断续导通模式（DCM）
  • 集成 90V/0.1Ω LDMOS
  • 集成无损电流采样
  • 可编程峰值电流
  • 可编程功率 MOSFET 驱动速度
  • 可编程频率抖动功能
  • 可编程输入欠压及过压保护
  • 过流保护、短路保护、过温保护
  • 线性降低工作频率，优化轻载效率
  • 内置前馈补偿功能
  • 内置软启动与斜坡补偿
  • 内置 CCM/DCM 模式下的原边反馈（PSR）环路控制
  • 直连光耦接口
  • 内置环路补偿及输出二极管压降温度补偿
  • ESOP8 强散热封装

RVPW014 是一款高集成度电源控制芯片，专为多种电源拓扑设计，包括反激、升压和降压拓扑，并支持多种输出电压反馈方式，如副边反馈（SSR）、原边反馈（PSR）及电阻分压反馈。

该芯片支持数百 kHz 开关频率下的原边反馈（PSR）。其内置输出电压采样电路可在连续导通模式（CCM）和断续导通模式（DCM）下工作，采样时间短至 400ns。芯片内置环路补偿电路，动态响应速度快，可确保开关电源具备优异的系统稳定性和瞬态性能。

RVPW014 集成多种控制功能，仅需简单外围器件，可根据应用需求灵活设计。通过单颗外接电阻，即可实现启动时序、前馈补偿、内部功率 MOSFET 关断速度三项可编程功能。功率 MOSFET 的峰值电流也可通过电阻设定，实现无损电流采样。仅需两颗电阻即可同时配置输入欠压和过压保护阈值。

在 FB 引脚与地之间连接电容可启用频率抖动功能，抖动周期可通过电容值编程设定；若将 FB 引脚直接接地，则禁用频率抖动功能。

RVPW014 集成全面的保护功能：过流保护（OCP）、过载保护（OLP）、输出短路保护（SCP）、输出过压保护（OVP）及过温保护（OTP）。故障解除后芯片支持自动恢复，从而提升电源系统的整体可靠性。

  产品编号 功率（W） 输入电压（V） 输出电压 1（V） 输出电流 1 (mA) 隔离电压 (kV)
1 RECOM | RVPW014-FJ1-CT | IC, SMD
重点 新
4 - 50
2 RECOM | RVPW014-FJ1-R | IC, SMD
重点 新
4 - 50

IC 与变压器组合方案，板载 / 分立器件任意选

  产品编号 功率（W） 隔离电压 (kV) 输入电压（V） 主输出电压（V） 原边 IC 变压器 副边 IC
1
新
6 1.5 9 - 36 5
2
新
6 1.5 9 - 36 15
3
新
6 3 9 - 36 12
4
新
6 1.5 9 - 36 12
特性 RVPW014
Product Category IC
输入电压（V） 4 - 50
主输出电压（V） 2 ‐ 999
输出电压范围（V） 2 - 999
MAX Iout (mA) 5
安装类型 SMD
封装类型 ESOP-8
长度 (mm) 5
宽度 (mm) 6.2
高度 (mm) 1.7
最低工作温度 (°C) -40
最高工作温度 (°C) 125
保护功能 OCP, OTP, OVP, UVLO
指令 Halogen-free, REACH, RoHS 2+ (10/10)
工作模式 Current Mode
质保 1 Year
Config 1 Channel
拓扑结构 Flyback
Number of Phases 1
MAX Duty Cycle (%) 80
Functional Features Enable, Variable Switching Frequency
MIN Switching Frequency (kHz) 9
MAX Switching Frequency (kHz) 330
MIN Storage Temperature (°C) -55
MAX Storage Temperature (°C) 150
  产品编号 功率（W） 输出电压 1（V） 输入电压（V） 安装类型
1 RECOM | RVPW014-FJ1-CT | IC, SMD
重点 新
4 - 50 SMD
2 RECOM | RVPW014-FJ1-R | IC, SMD
重点 新
4 - 50 SMD
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).

MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.