RVP010-PPN-R
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RVP010 是一款推挽式变压器驱动芯片，专为小体积、低待机功耗的隔离式微功率电源而设计。仅需简单的外围配置，包括输入输出滤波电容、隔离变压器及整流电路，即可构成一套完整的隔离电源方案：输入电压为 3.3V 或 5V，输出电压范围 3.3V～24V，输出功率 1W～3W。
RVP010 内置振荡器，可产生一对高精度互补信号，用以驱动两颗 N 沟道开关管。其对称式内部架构确保两颗功率开关具备优异的平衡性，最大程度减小工作时的磁偏置。芯片配备使能引脚（EN），并支持两种可选工作频率，可通过将 CLK 引脚悬空或接地进行选择。芯片还集成了高精度死区控制电路，确保两颗功率开关在任何工作条件下均不会同时导通。
IC 与变压器组合方案，板载 / 分立器件任意选
| 产品编号 | 功率（W） | 隔离电压 (kV) | 输入电压（V） | 主输出电压（V） | 原边 IC | 变压器 | 副边 IC | |||
|---|---|---|---|---|---|---|---|---|---|---|
| 1 |
DS-RVP010-RMR-006-3.305-1
新
| 1 | 1.5 | 3.3 | 5 |
RVP010
| ||||
| 2 |
DS-RVP010-RMR-007-0505-1
新
| 2 | 1.5 | 5 | 5 |
RVP010
| ||||
| 3 |
DS-RVP010-RMR-009-053.3-1
新
| 1 | 1.5 | 5 | 3.3 |
RVP010
| ||||
| 4 |
DS-RVP010-RMR-015-0512-1
新
| 1 | 1.5 | 5 | 12 |
RVP010
| ||||
| 5 |
DS-RVP010-RMR-016-0515-1
新
| 1 | 3 | 5 | 15 |
RVP010
| ||||
| 6 |
DS-RVP010-RMR-020-0512-1
新
| 1 | 3 | 5 | 12 |
RVP010
|
| 特性 | RVP010-PPN-R |
|---|---|
| Product Category | IC |
| 输入电压（V） | 2.8 - 6 |
| 主输出电压（V） | 2.8 ‐ 6 |
| 输出电压范围（V） | 2.8 - 6 |
| MAX Iout (mA) | 1 |
| 安装类型 | SMD |
| 封装类型 | SOT23-6 |
| 长度 (mm) | 3.02 |
| 宽度 (mm) | 3 |
| 高度 (mm) | 1.25 |
| 最低工作温度 (°C) | -40 |
| 最高工作温度 (°C) | 125 |
| 保护功能 | OCP, OTP |
| 指令 | Halogen-free, REACH, RoHS 2+ (10/10) |
| 包装类型 | 管装&卷装 |
| 卷带宽度 (mm) | 8 |
| 工作模式 | Current Mode |
| 质保 | 1 Year |
| Config | 1 Channel |
| 拓扑结构 | Push-Pull |
| Number of Phases | 1 |
| MAX Duty Cycle (%) | 100 |
| Functional Features | Enable |
| MIN Switching Frequency (kHz) | 217 |
| MAX Switching Frequency (kHz) | 390 |
| MIN Storage Temperature (°C) | -55 |
| MAX Storage Temperature (°C) | 150 |
文件
| 标题 | 类型 | 日期 |
|---|---|---|
| RVP010.pdf | Datasheet | |
| RVP010_SPICE.zip | Simulation Model | 2026-3-19 |
| RVP010.STEP | 2D/3D | 2025-10-13 |
Links
| 标题 | 类型 | 日期 |
|---|---|---|
| Designing High-Performance Isolated DC/DC Power Stages with Discrete Components | Whitepaper | 2026-6-1 |
| 借助集成模块与经验证的分立器件简化电源架构 | Whitepaper | 2026-5-26 |
| 隔离式 DC/DC 转换器：采用分立方案，还是使用集成模块？ | Whitepaper | 2026-5-11 |
| 面向分布式电源架构的隔离式 DC/DC 电源IC及分立电源解决方案 | Blog Article | 2026-3-13 |
| 标题 | 类型 | 日期 |
|---|---|---|
| RECOM RVP 系列变压器驱动IC | Video | 2026-5-19 |
Important parameters include input voltage range, output voltage, maximum load current, switching frequency, efficiency, size, and thermal performance. Selection involves balancing these factors to meet the specific requirements of your application, ensuring the IC operates within its safe thermal and electrical limits while minimizing PCB space.
A boost converter increases the input voltage to a higher output voltage using an inductor, low-side switch, a rectifier, and output filter.
A buck converter reduces the input voltage to a lower output voltage using a high-frequency high-side or low-side switch, an inductor, a rectifier, and output filtering.
A buck‑boost converter can both increase and decrease the output voltage in relation to the input voltage using one or more inductors, a high-side or a low-side switch, rectifiers, and output filtering.
A DC/DC controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
A DC/DC converter IC converts one DC voltage level to another using switching techniques and integrated control circuitry.
A synchronous converter replaces the traditional rectifier diode with a MOSFET, which reduces conduction losses and significantly improves efficiency.
An asynchronous converter uses a diode as the rectification element, resulting in a simpler design but typically lower efficiency compared to synchronous alternatives.
A converter IC typically integrates the power switches internally, providing a more compact solution. In contrast, a controller IC manages the switching behavior of external power components such as MOSFETs, inductors, and transformers.
Buck-boost converters are commonly used when the input voltage can vary above and below the desired output voltage. For example, this topology is ideal for maintaining a 12V fixed voltage from a 12V battery supply, where the battery level may fluctuate during discharge or charging.
Push-pull and full bridge topologies are often unregulated, making them best suited for use with regulated input voltage rails. Push-pull is preferred for 3.3V and 5V input voltage rails because the input current is shared between the switching transistors, allowing more power to be extracted from a smaller IC package. Full Bridge is preferred for 5V up to 24V input voltage rails because the input voltage stress is shared between the switching transistors, enabling it to efficiently switch higher input voltages. For regulated output voltages, wider input voltage ranges, or higher output power applications, Flyback is the preferred topology due to its versatility and ability to provide galvanic isolation.
Power ICs enable efficient switching topologies, optimized control algorithms, and fast switching frequencies that minimize power losses.
Key advantages include high integration, a small footprint, and improved efficiency. Integrated power ICs allow designers to create optimized power solutions tailored specifically for unique applications.
Power ICs typically require more external components and careful PCB design. This requirement for additional external parts and complex layout increases overall development complexity.
Common types include DC/DC converter ICs, PWM controller ICs, gate driver ICs, PMICs, linear regulators, and battery management ICs.
Power ICs are used in industrial electronics, telecom systems, consumer electronics, automotive systems, and IoT devices.
A power IC (power integrated circuit) is a semiconductor device designed to regulate or convert electrical power. It integrates essential functions such as feedback regulation, switching control, protection, and power management into a single chip.
A PMIC is an integrated circuit designed to manage power distribution within complex electronic systems. It typically integrates multiple voltage regulators, power sequencing, battery management, and system monitoring functions into a single semiconductor device.
A power IC is a semiconductor controller chip that requires external magnetic components such as inductors or transformers but often includes integrated power switching transistors. A power module integrates many of these discrete components into a single packaged solution, simplifying PCB design and reducing overall development time.
Power switching transistors differ primarily in how they are controlled, their switching speed, maximum switching voltage, and their power-handling limits. The main types include MOSFETs (up to 100kHz, 600V, 1kW), SiCs (up to 500kHz, 3.3kV, 100kW), GaNs (up to 1MHz, 900V, 10kW), and IGBTs (up to 50kHz, 6.5kV, 1MW).
MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
MOSFETs are most often used in switching power supplies due to their low cost and ease of integration. SiCs and GaNs are utilized for high-frequency switching applications, while IGBTs are preferred for very high power or high-voltage switching.
Power ICs are often utilized when designers require maximum flexibility, lower cost at high volumes, or highly customized power architectures.
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